Transport and magnetotransport properties of Mn-doped InxGa1 xAs/GaAs quantum well structures
نویسندگان
چکیده
We report on the transport, magnetotransport and magnetic properties of In0.17Ga0.83As quantum well in GaAs d-doped by Mn. At low temperatures, the anomalous Hall effect was observed which detects the spin-polarized carriers. Negative magnetoresistance was found at low temperatures, which became positive at high temperature. r 2005 Elsevier B.V. All rights reserved. PACS: 72.20. i; 75.50.Gg
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